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Absolute radiometry using silicon heterophotodiodes with the structure In2O3-SiOx-nSi

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Abstract

The main results of experimental investigations of heterophotodiodes with the structure In2O3-SiOx-nSi and absolute radiometers utilizing such elements are discussed. An arrangement of four or even three diodes in a mirror trap geometry eliminates nonuniformity of the sensitivity, obviates the need for precise measurements of the spectral reflection coefficients of their front surfaces, and helps to reduce the error of such a radiometer to 0.1%.

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Authors
  1. V. I. Kvochka
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Translated from Izmeritel'naya Tekhnika, No. 6, pp. 17–21, June, 1994

In closing, the author is grateful to V. A. Manasson for furnishing the samples and to A. K. Mkrtchyan for assisting with the measurements.

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Kvochka, V.I. Absolute radiometry using silicon heterophotodiodes with the structure In2O3-SiOx-nSi. Meas Tech 37, 623–630 (1994). https://doi.org/10.1007/BF00978314

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  • DOI: https://doi.org/10.1007/BF00978314

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