Abstract
The results are presented of an experimental investigation of the temporal drift and the hydrogen response of five types of integrated semiconductor sensors with palladium films, and a refined model is proposed for the hydrogen sensitivity of sensors with a palladium-insulator-semiconductor structure.
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Translated from Izmeritel'naya Tekhnika, No. 1, pp. 22–25, January, 1995.
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Fomenko, S.V., Podlepetskii, B.I. & Gumenyuk, S.V. Integrated semiconductor hydrogen sensors. Meas Tech 38, 36–41 (1995). https://doi.org/10.1007/BF00976744
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DOI: https://doi.org/10.1007/BF00976744