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Development of semiconductor devices on the basis of their inverse-current values

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Measurement Techniques Aims and scope

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Literature cited

  1. A. G. Ryzhevskii, Author's Certificate No. 169590. Bulletin of Inventions No. 7 (1965).

  2. T. A. Dickerson, Electrical Design News, 7, No. 5

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Authors
  1. V. M. Shlyandin
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  2. A. G. Ryzhevskii
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Shlyandin, V.M., Ryzhevskii, A.G. Development of semiconductor devices on the basis of their inverse-current values. Meas Tech 9, 641–643 (1966). https://doi.org/10.1007/BF00975218

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  • DOI: https://doi.org/10.1007/BF00975218

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