Conclusions
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1.
The stability of silicon-containing phenoxyl radicals depends on the degree of steric shielding of the reaction center, responsible for the dimerization, by the trialkylsilyl groups.
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2.
A linear relationship exists between the logarithms of the relative destruction rate constants of silicon-containing phenoxyl radicals and the sum of the steric constants of the alkyl substituents on the silicon atom.
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3.
The conversion of silicon-containing phenoxyl radicals to tetrasubstituted disiloxybiphenyls proceeds via the dimerization of the radicals to theα-ketomethyl form at the carbon atoms to which the trialkylsilyl groups, which migrate to the oxygen, are attached.
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Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 6, pp. 1385–1389, June, 1980.
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Muslin, D.V., Lyapina, N.S., Klimov, E.S. et al. Steric effect of o-organosilyl substituents in dimerization of silicon-containing phenoxyl radicals. Russ Chem Bull 29, 998–1002 (1980). https://doi.org/10.1007/BF00958825
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DOI: https://doi.org/10.1007/BF00958825