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Photoelectron spectra and electronic structure of (Alkylthiomethyl)trimethoxysilanes

  • Physical Chemistry
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Bulletin of the Academy of Sciences of the USSR, Division of chemical science Aims and scope

Conclusions

  1. 1.

    The He-1 photoelectron spectra of a number of (alkylthiomethyl)trimethoxysilanes with the formula RSCH2Si(OMe)3 (R=Me, Et, Pr, Bu, Me2CHCH2, Me3C) have been studied. The highest two MOs in the molecules of these compounds are close in energy, but differ strongly in nature. The first of them consists mainly of a sulfur p AO and is perpendicular to the plane of the CSC group, and the other one includes s and p AOs of the S atom with a similar contribution from the S C and Si-C bonds and is destabilized by the interaction of the n electrons of the. S and O atoms through the intermediate bonds.

  2. 2.

    In the molecule of (tert-butylthiomethyl)trimethoxysilane the fraction of the cis conformations is apparently reduced owing to the steric interaction.

  3. 3.

    The values of the Kabachnik and Taft induction constants of the CH2Si(OMe)3 group have been determined from the spectroscopic characteristic (ai=−1.30 and σ* −0,25).

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Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 5, pp. 1105–1110, May, 1986.

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Ermakov, A.I., Makrushin, N.A., Sorokin, M.S. et al. Photoelectron spectra and electronic structure of (Alkylthiomethyl)trimethoxysilanes. Russ Chem Bull 35, 1001–1005 (1986). https://doi.org/10.1007/BF00955367

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  • DOI: https://doi.org/10.1007/BF00955367

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