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Excess mechanical stress induced in mesa p-n junctions by hydrostatic pressure

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Abstract

We consider the excess mechanical stresses induced in semiconductor devices when an external pressure is applied near a p-n junction. The excess stresses are calculated for a p-n tunnel diode under hydrostatic pressure. It is found that these stresses significantly influence the pressure dependence of the peak current in GaAs tunnel diodes. The hysteresis in the peak current is caused by a displacement of electrode material in the neighborhood of the contact.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk University, USSR

    A. P. Byatkin, N. P. Kriborotov & A. M. Misik

Authors
  1. A. P. Byatkin
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  2. N. P. Kriborotov
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  3. A. M. Misik
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 60–63, April, 1976.

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Byatkin, A.P., Kriborotov, N.P. & Misik, A.M. Excess mechanical stress induced in mesa p-n junctions by hydrostatic pressure. Soviet Physics Journal 19, 449–452 (1976). https://doi.org/10.1007/BF00951968

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  • DOI: https://doi.org/10.1007/BF00951968

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