Abstract
We study the concentration-dependent diffusion of dopant impurities into semiconductors. In particular, we examine the two-dimensional diffusion in the vicinity of a mask. Numerical solutions are obtained for dopant diffusion with fixed-total-concentration and with constant-surface-concentration. For the fixed-total-concentration case, we also obtain approximate power series solutions. Our numerical and approximate results are compared with analytical and numerical results obtained by other investigators.
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Schwendeman, D.W. Nonlinear diffusion of impurities in semiconductors. Z. angew. Math. Phys. 41, 607–627 (1990). https://doi.org/10.1007/BF00946097
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DOI: https://doi.org/10.1007/BF00946097