Abstract
The electronic configuration of the HOSiO3 3− cluster, which simulates an isolated OH group on an SiO2 surface, has been calculated by the SCF-Xα-scattered-wave method with overlapping spheres. The calculation of the binding energies of the Si core electrons confirmed the previously drawn conclusion [see Teor. Éksp. Khim.,16, No. 4, 458 (1980)] that the formation of pairs of ions (≡Si+, ≡SiO−) and radicals (≡Si·, ≡SiO·) upon the dehydroxylation of SiO2 should be accompanied by negative chemical shifts of E2s and E2p of Si, while the formation of di- and trisiloxane bridges should be accompanied by positive chemical shifts. A comparison of the values of E2s and E2p of Si for various clusters was conducted with the use of corrections which take into account the differences in the radii of the Watson spheres. Extrapolation of the dependence of qSi on E2s and E2p of Si revealed that the charge of Si in crystalline silicon is equal to 0.6–0.8. The height of the barrier to the hindered rotation of a surface OH group on SiO2 calculated in the framework of the model adopted is equal to 0.052 eV, which is in good agreement with the experimental value (0.038 eV).
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Translated from Teoreticheskaya i Éksperimental'naya Khimiya, Vol. 21, No. 5, pp. 513–522, September–October, 1985.
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Guzikevich, A.G. Calculations of the chemical shifts of E2s and E2p of Si in model clusters of an SiO2 surface. Theor Exp Chem 21, 489–497 (1985). https://doi.org/10.1007/BF00944080
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DOI: https://doi.org/10.1007/BF00944080