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Temperature dependence of the capacitance variation and deep-center parameter determination for the space-charge region in a CdS-GaAs heterojunction

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Literature cited

  1. V. M. Lupin and P. E. Ramazanov, Izv. Vyssh. Uchebn. Zaved., Fiz. (in press).

  2. Yu. A. Gol'dberg and B. V. Tsarenkov, Fiz. Tekh. Poluprovodn.,5, 1781 (1971).

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  3. W. Shockley and W. T. Read, Phys. Rev.,87, 835 (1952).

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  4. V. M. Lupin, P. E. Ramazanov, M. A. Baldakov, and Yu. N. Protasov, Papers of the Anniversary Con- ference of the Radio Physics Faculty, Part 1, Semiconductor and Insulator Physics Section [in Russian], Izd. TGU, Tomsk (1973), p. 83.

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  5. K. D. Glinchuk, Semiconductor Technology and Microelectronics [in Russian], Issue 7 (1972), p. 51.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, USSR

    V. M. Lupin & P. E. Ramazanov

Authors
  1. V. M. Lupin
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  2. P. E. Ramazanov
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 143–144, June, 1976.

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Lupin, V.M., Ramazanov, P.E. Temperature dependence of the capacitance variation and deep-center parameter determination for the space-charge region in a CdS-GaAs heterojunction. Soviet Physics Journal 19, 809–811 (1976). https://doi.org/10.1007/BF00943495

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  • DOI: https://doi.org/10.1007/BF00943495

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