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Measurement of specific transient resistances of ohmic contacts to thin semiconductor layers

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Abstract

A method is described for measuring specific transient resistances of ohmic contacts to thin semiconductor layers by experimentally taking into account the spreading resistance. Studies are performed by this method on the way in which the specific transient resistances of AuGe-Ni and Au-Ni contacts to n-type gallium phosphide depend on the brazing temperature.

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Authors and Affiliations

  1. Moscow Institute of Steel and Alloys, USSR

    S. G. Madoyan & M. K. Guseikhanov

Authors
  1. S. G. Madoyan
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  2. M. K. Guseikhanov
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 80–83, June, 1976.

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Madoyan, S.G., Guseikhanov, M.K. Measurement of specific transient resistances of ohmic contacts to thin semiconductor layers. Soviet Physics Journal 19, 750–753 (1976). https://doi.org/10.1007/BF00943474

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  • DOI: https://doi.org/10.1007/BF00943474

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