Abstract
A semiconductor device with an S-type characteristic due to dependence of the depth of local levels on the free-carrier concentration is considered. A calculation is made of the mean random-switching time of such a device from the semiconducting to the metallic state due to the random character of the trapping and ejection of carriers from centers.
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Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 143–145, February, 1976.
We would like to thank V. L. Bonch-Bruevich for useful discussions.
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Dneprovskaya, T.S., Serebrennikov, P.S. Random switching time of semiconductor element with S-type characteristic. Soviet Physics Journal 19, 249–251 (1976). https://doi.org/10.1007/BF00942878
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DOI: https://doi.org/10.1007/BF00942878