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Photostimulated kinetic effects in semiconductors

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Abstract

It is shown that the presence of intense laser radiation can result in the origination of “spreading” of kinetic effects even in a degenerate monopolar semiconductor with an isotropic energy spectrum, where the magnitude of such “photostimulated” effects can exceed the magnitude of corresponding effects in the absence of radiation, due to the thermal spread of current carriers in the energies or anisotropies of isoenergetic surfaces. Photostimulated Ettingshausen, Peltier, and transverse magnetoresistive effects are considered.

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Authors
  1. V. L. Malevich
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  2. É. M. Épshtein
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 121–129, February, 1976.

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Malevich, V.L., Épshtein, É.M. Photostimulated kinetic effects in semiconductors. Soviet Physics Journal 19, 230–237 (1976). https://doi.org/10.1007/BF00942874

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  • DOI: https://doi.org/10.1007/BF00942874

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