Abstract
The magnetoresistance and transverse Nernst-Ettingshausen effect in classical magnetic fields are calculated for the case of low-temperature scattering of electrons by optical phonons. It is shown that even though the electron relaxation time does not depend on the energy, not only are the indicated effects still possible, they can have a magnitude much greater than for other scattering mechanisms.
Similar content being viewed by others
Literature cited
L. S. Stil'bans, Physics of Semiconductors [in Russian], Sov. Radio, Moscow (1967).
B. M. Askerov, Kinetic Effects in Semiconductors [in Russian], Nauka, Leningrad (1970).
B. L. Davydov and I. M. Shmushkevich, Zh. Eksp. Teor. Fiz.,10, 1043 (1940).
A. I. Ansel'm, Introduction to the Theory of Semiconductors [in Russian], Fizmatgiz, Moscow-Leningrad (1962).
I. M. Tsidil'kovskii, Thermomagnetic Phenomena in Semiconductors [in Russian], Fizmatgiz, Moscow (1960).
H. Frölich and N. F. Mott, Proc. Roy. Soc.,A171, 496 (1939).
B. I. Davydov and I. M. Shmushkevich, Usp. Fiz. Nauk,24, 21 (1940).
V. L. Gurevichand Yu. A. Firsov, Zh. Eksp. Teor. Fiz.,40, 199 (1961).
M. A. Krivoglaz and S. I. Pekar, Izv. Akad. Nauk SSSR, Ser. Fiz.,21, 3 (1957).
B. F. Lewis and E. H. Sondheimer, Proc. Roy. Soc.,A227, 241 (1955).
Sh. M. Gasanli, O. V. Emel'yanenko, T. S. Lagunova, and D. N. Nasledov, Fiz. Tekhn. Poluprovodn,5, 362 (1971).
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No.2, pp. 116–120, February, 1976.
The author is indebted to V. L. Bonch-Bruevich and A. G. Mironov for a useful discussion.
Rights and permissions
About this article
Cite this article
Épshtein, É.M. Theory of magnetoresistive and thermomagnetic effects with electron scattering by optical phonons in semiconductors. Soviet Physics Journal 19, 226–230 (1976). https://doi.org/10.1007/BF00942873
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00942873