Soviet Physics Journal

, Volume 19, Issue 2, pp 219–226 | Cite as

Current transfer mechanism in metal-dielectric-metal systems based on vanadium-phosphorus glasses

  • V. I. Gaman
  • V. M. Kalygina
  • É. F. Ryannel'


Based on an analysis of the volt-ampere characteristics and temperature dependence of conductivity, the mechanism of current transfer is discussed in thin-film systems of metal/vanadium -phosphorus glass/metal. The conclusion is drawn that the magnitude of the current in samples obtained by sputtering of the glass on a “hot” backing (Tb = 200°C) is determined by the resistance of the volume of the glass film, but for samples sputtered on a “cold” backing (Tb = 30–90°C), by the resistance of the potential barriers at the metalglass interface. It is supposed that current transfer in a film of glass is accomplished by polarons of small radius.


Phosphorus Potential Barrier Transfer Mechanism Small Radius Current Transfer 
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Copyright information

© Plenum Publishing Corporation 1977

Authors and Affiliations

  • V. I. Gaman
    • 1
  • V. M. Kalygina
    • 1
  • É. F. Ryannel'
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical InstituteTomsk State UniversityUSSR

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