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Soviet Physics Journal

, Volume 19, Issue 2, pp 219–226 | Cite as

Current transfer mechanism in metal-dielectric-metal systems based on vanadium-phosphorus glasses

  • V. I. Gaman
  • V. M. Kalygina
  • É. F. Ryannel'
Article
  • 17 Downloads

Abstract

Based on an analysis of the volt-ampere characteristics and temperature dependence of conductivity, the mechanism of current transfer is discussed in thin-film systems of metal/vanadium -phosphorus glass/metal. The conclusion is drawn that the magnitude of the current in samples obtained by sputtering of the glass on a “hot” backing (Tb = 200°C) is determined by the resistance of the volume of the glass film, but for samples sputtered on a “cold” backing (Tb = 30–90°C), by the resistance of the potential barriers at the metalglass interface. It is supposed that current transfer in a film of glass is accomplished by polarons of small radius.

Keywords

Phosphorus Potential Barrier Transfer Mechanism Small Radius Current Transfer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1977

Authors and Affiliations

  • V. I. Gaman
    • 1
  • V. M. Kalygina
    • 1
  • É. F. Ryannel'
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical InstituteTomsk State UniversityUSSR

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