Soviet Physics Journal

, Volume 19, Issue 2, pp 190–194 | Cite as

Determination of random field characteristics in strongly doped semiconductors by the photoemission method

  • M. Ya. Yushina
Article
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Abstract

Study of the external photoeffect permits investigation of the state density near the bottom of the conduction band in a strongly doped semiconductor with negative effective affinity. Consideration of the effect of the random impurity field in the highly doped semiconductor leads to broadening of the energy distribution curve of emitted electrons. The possibility of determining mean-square fluctuation of electron potential energy from photoemission data is demonstrated. Results are compared with experiment.

Keywords

Potential Energy Conduction Band Energy Distribution Random Field Distribution Curve 

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Copyright information

© Plenum Publishing Corporation 1977

Authors and Affiliations

  • M. Ya. Yushina

There are no affiliations available

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