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Waves in thin semiconductor layers with negative differential conductivity

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Conclusion

The wave process in semiconductor films with negative differential resistivity is peculiar in that there is a spatial increase of wave amplitude given the condition that the propagating wave has an electric field component along the direction of carrier drift. Such a condition is realized in structures with longitudinal drift when quasistatic space charge waves are amplified, and in structures with transverse drift, where quasiturbulent electromagnetic waves are amplified.

In structures with longitudinal drift all propagating modes have identical phase velocity, close to the charge carrier drift velocity. The modes differ from each other in attenuation (amplification) coefficient and potential and charge distribution over film thickness. In structures with transverse drift only the fundamental quasi-TEM type mode is propagated, with a phase velocity close to the speed of light in the medium. Higher modes are nonpropagating due to cutoff of the waveguide structure.

Experimental studies have confirmed the fundamental physical concepts and theoretical results, and have shown the promise of semiconductor structures with negative differential resistivity in uhf microelectronics.

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Authors and Affiliations

  1. V. I. Ul'yanov (Lenin) Leningrad Electrotechnical Institute, USSR

    A. A. Barybin & V. M. Prigorovskii

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  1. A. A. Barybin
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  2. V. M. Prigorovskii
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 28–41, August, 1981.

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Barybin, A.A., Prigorovskii, V.M. Waves in thin semiconductor layers with negative differential conductivity. Soviet Physics Journal 24, 704–717 (1981). https://doi.org/10.1007/BF00941341

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