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Transformation of exciton and donor-acceptor luminescence spectra of p+-layers of gallium phosphide light-emitting structures on introduction of dislocations

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Authors and Affiliations

  1. Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, Kiev

    T. V. Torchinskaya, A. G. Karabaev, N. E. Korsunskaya, B. R. Dzhumaev, I. V. Prokopenko & M. K. Sheinkman

Authors
  1. T. V. Torchinskaya
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  2. A. G. Karabaev
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  3. N. E. Korsunskaya
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  4. B. R. Dzhumaev
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  5. I. V. Prokopenko
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  6. M. K. Sheinkman
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Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 53, No. 5, pp. 761–767, November, 1990.

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Torchinskaya, T.V., Karabaev, A.G., Korsunskaya, N.E. et al. Transformation of exciton and donor-acceptor luminescence spectra of p+-layers of gallium phosphide light-emitting structures on introduction of dislocations. J Appl Spectrosc 53, 1161–1166 (1990). https://doi.org/10.1007/BF00938129

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  • DOI: https://doi.org/10.1007/BF00938129

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