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Epitaxy at ultralow temperatures

  • Physics of Semiconductors and Dielectrics
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Russian Physics Journal Aims and scope

Abstract

Epitaxial films of II–VI compounds at ultralow (below 0°C) substrate temperatures have been obtained for the first time. A model is proposed for the oriented growth of semiconductor (metallic, dielectric) thin films under these conditions, taking into account the effect that crystallization of the adsorbed water has on the early stage of film growth.

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Authors and Affiliations

  1. Lensovet St. Petersburg Technological Institute, USSR

    K. K. Murav'eva & V. P. Rubets

Authors
  1. K. K. Murav'eva
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  2. V. P. Rubets
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 41–45, February, 1992.

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Murav'eva, K.K., Rubets, V.P. Epitaxy at ultralow temperatures. Soviet Physics Journal 35, 132–135 (1992). https://doi.org/10.1007/BF00936865

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  • DOI: https://doi.org/10.1007/BF00936865

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