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Applied physics

, Volume 7, Issue 3, pp 195–201 | Cite as

High resistivity layers of GaAs grown by liquid phase epitaxy

  • A. Schlachetzki
  • H. Salow
Contributed Papers

Abstract

The preparation of high-resistivity undoped GaAs layers is described. The layers were epitaxially grown from the liquid phase on semi-insulating GaAs substrates. Up to 106 Ωcm in resistivity were obtained. The layers are highly compensated. Their temperature behaviour resembles that of Cr-doped semi-insulating bulk material. Additionally it is reported on the doping effect of Cr, Fe, Co, and Ni in the liquid phase epitaxy.

Index Headings

GaAs Liquid phase epitaxy High resistivity layers 

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Copyright information

© Springer-Verlag 1975

Authors and Affiliations

  • A. Schlachetzki
    • 1
  • H. Salow
    • 1
  1. 1.Research Institute of the German Post OfficeDarmstadtFed. Rep. Germany

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