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High resistivity layers of GaAs grown by liquid phase epitaxy

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Abstract

The preparation of high-resistivity undoped GaAs layers is described. The layers were epitaxially grown from the liquid phase on semi-insulating GaAs substrates. Up to 106 Ωcm in resistivity were obtained. The layers are highly compensated. Their temperature behaviour resembles that of Cr-doped semi-insulating bulk material. Additionally it is reported on the doping effect of Cr, Fe, Co, and Ni in the liquid phase epitaxy.

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Authors and Affiliations

  1. Research Institute of the German Post Office, D-6100, Darmstadt, Fed. Rep. Germany

    A. Schlachetzki & H. Salow

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  1. A. Schlachetzki
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  2. H. Salow
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Schlachetzki, A., Salow, H. High resistivity layers of GaAs grown by liquid phase epitaxy. Appl. Phys. 7, 195–201 (1975). https://doi.org/10.1007/BF00936024

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  • DOI: https://doi.org/10.1007/BF00936024

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