Applied physics

, Volume 10, Issue 1, pp 97–99 | Cite as

Experimental evidence for GaAs surface quality affecting ohmic contact properties

  • H. Paria
  • H. Hartnagel
Letter Papers


An experimental study is described of barrier heights at the junction between (111) faces of semiconductingn-type bulk GaAs and alloyed In−Ge−Ag metal contacts. It is observed that strong corrugation of the semiconducting surface causes the barrier height to be higher than that of flat surfaces.

PACS Codes

73 85.30 


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Copyright information

© Springer-Verlag 1976

Authors and Affiliations

  • H. Paria
    • 1
  • H. Hartnagel
    • 1
  1. 1.Department of Electrical and Electronic Engineering, The UniversityNewcastle upon TyneUK

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