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Applied physics

, Volume 10, Issue 1, pp 97–99 | Cite as

Experimental evidence for GaAs surface quality affecting ohmic contact properties

  • H. Paria
  • H. Hartnagel
Letter Papers

Abstract

An experimental study is described of barrier heights at the junction between (111) faces of semiconductingn-type bulk GaAs and alloyed In−Ge−Ag metal contacts. It is observed that strong corrugation of the semiconducting surface causes the barrier height to be higher than that of flat surfaces.

PACS Codes

73 85.30 

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References

  1. 1.
    H. Hartnagel, B. L. Weiss: J. Mat. Sci.8, 1061 (1973)CrossRefGoogle Scholar
  2. 2.
    W. Tantraporn: J. Appl. Phys.41, 4669 (1970)CrossRefADSGoogle Scholar
  3. 3.
    F. A. Padovani: InSemiconductors and Semimetals, Vol.7, ed. by Willardson, R. K., and Beer, A. C.: (Academic Press, New York 1971)Google Scholar

Copyright information

© Springer-Verlag 1976

Authors and Affiliations

  • H. Paria
    • 1
  • H. Hartnagel
    • 1
  1. 1.Department of Electrical and Electronic Engineering, The UniversityNewcastle upon TyneUK

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