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Deep levels in gallium arsenide by capacitance methods

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Abstract

The three capacitance methods, i.e., TSCAP, PHCAP, and transient capacitance measurements, are applied to determine electronic properties of deep levels inn-GaAs. In the boat-grown wafer detected are the 0.30 eV electron trap withN T =3.6×1016 cm−3 andS n =2.4×10−15 cm2, and the 0.75 eV electron trap withN T =2.0×1016 cm−3 andS n =1.2×10−14 cm2. In the epitaxial wafer, the 0.45 eV hole trap is detected withN T >1.5×1013 cm−3 andS p =1.4×10−14 cm2 as well as the 0.75 eV electron trap withN T =2.4×1013 cm−3.

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Authors and Affiliations

  1. Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, Japan

    Kazuo Sakai & Toshiaki Ikoma

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  1. Kazuo Sakai
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  2. Toshiaki Ikoma
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Sakai, K., Ikoma, T. Deep levels in gallium arsenide by capacitance methods. Appl. Phys. 5, 165–171 (1974). https://doi.org/10.1007/BF00928230

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