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Investigations on the nucleation parameters of InGaAs grown on InP during LPE

  • R. Jothilingam
  • R. Dhanasekaran
  • P. Ramasamy
Article

Abstract

The initial stages of LPE growth of the InGaAs ternary compound on an InP substrate were analysed using the classical heterogeneous nucleation theory, incorporating lattice mismatch between the grown alloy and the substrate. The explicit expression for the lattice mismatch induced supercooling for the growth of the chosen system was established, and it was used to evaluate the nucleation parameters. It has been proved theoretically that the nucleation barrier for the formation of InxGa1 −x As on InP depends very strongly on the composition of the alloy; the condition for the growth of good quality InGaAs on InP was calculated.

Keywords

Electronic Material Explicit Expression Heterogeneous Nucleation Lattice Mismatch Ternary Compound 
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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • R. Jothilingam
    • 1
  • R. Dhanasekaran
    • 1
  • P. Ramasamy
    • 1
  1. 1.Crystal Growth Centre, Anna UniversityMadrasIndia

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