Abstract
Silicon-nitride films were deposited by a plasma-enhanced-chemical-vapour-deposition (PECVD) technique using silane-nitrogen as the reactant-gas sources. The influence of the process parameters (such as the flow ratio of the reactant gases, the pressure, the substrate temperature, the radio frequency (r.f.) power, the time of deposition and the electrode spacing) on the deposition and etch rates were investigated and the experimental results are presented in detail.
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Lee, K.R., Sundaram, K.B. & Malocha, D.C. Studies on deposition parameters of silicon-nitride films prepared by a silane—nitrogen plasma-enhanced-chemical-vapour-deposition process nitride films prepared by a silane—nitrogen. J Mater Sci: Mater Electron 5, 255–259 (1994). https://doi.org/10.1007/BF00921247
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DOI: https://doi.org/10.1007/BF00921247