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Studies on deposition parameters of silicon-nitride films prepared by a silane—nitrogen plasma-enhanced-chemical-vapour-deposition process nitride films prepared by a silane—nitrogen

  • K. R. Lee
  • K. B. Sundaram
  • D. C. Malocha
Article

Abstract

Silicon-nitride films were deposited by a plasma-enhanced-chemical-vapour-deposition (PECVD) technique using silane-nitrogen as the reactant-gas sources. The influence of the process parameters (such as the flow ratio of the reactant gases, the pressure, the substrate temperature, the radio frequency (r.f.) power, the time of deposition and the electrode spacing) on the deposition and etch rates were investigated and the experimental results are presented in detail.

Keywords

Nitrogen Silane Nitride Electronic Material Radio Frequency 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • K. R. Lee
    • 1
  • K. B. Sundaram
    • 1
  • D. C. Malocha
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of Central FloridaOrlandoUSA

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