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Applied physics

, Volume 11, Issue 2, pp 187–189 | Cite as

Electron and hole traps in N-GaAs crystals

  • Tsugunori Okumura
  • Masahiko Takikawa
  • Toshiaki Ikoma
Letter Papers

Abstract

Deep traps were measured and their electronic and optical properties were determined by junction capacitance techniques in n-GaAs crystals grown by different methods. Four electron-traps and four hole-traps were detected. An electron trap was not observed in LPE wafers. A hole trap at 0.45 eV above the top of the valence band was detected in all wafers measured here.

PACS Codes

72.20 85.30 

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Copyright information

© Springer-Verlag 1976

Authors and Affiliations

  • Tsugunori Okumura
    • 1
  • Masahiko Takikawa
    • 1
  • Toshiaki Ikoma
    • 1
  1. 1.Institute of Industrial ScienceUniversity of TokyoTokyoJapan

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