Electron and hole traps in N-GaAs crystals
Deep traps were measured and their electronic and optical properties were determined by junction capacitance techniques in n-GaAs crystals grown by different methods. Four electron-traps and four hole-traps were detected. An electron trap was not observed in LPE wafers. A hole trap at 0.45 eV above the top of the valence band was detected in all wafers measured here.
PACS Codes72.20 85.30
Unable to display preview. Download preview PDF.
- 6.F.Hasegawa, A.Majerfeld: Electron. Lett.11, 286 (1975)Google Scholar
- 7.D.V.Lang, L.C.Kimerling:Intern. Conf. Lattice Defects in Semiconductors, Freiburg 1974 (Inst. of Phys., London)Google Scholar
- 8.M.Takikawa, T.Okumura, T.Ikoma: presented at 23rd Joint Meeting of Soc. of Appl. Phys. in Japanese (1976)Google Scholar
- 9.F.Hasegawa, A.Majerfeld: Electron. Lett.12, 52 (1976)Google Scholar