Abstract
The annealing by outdiffusion of the “A-center” in GaAs (a deep electron trap, sometimes attributed to oxygen) has been studied quantitatively, and the diffusion coefficient determined as a function of temperature between 600 and 750 centigrade.
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S.M.Sze:Physics of Semiconductor Devices (Wiley-Interscience, New York 1969) Ch. 2
A.G.Milnes:Deep Levels in Semiconductors (Wiley-Interscience, New York 1973) Ch. 3
J.Copeland: IEEE Trans. ED-18, 50 (1971)
G.Acket: Philips Res. Repts.26, 261 (1971)
A.DeCaqueray, G.Blasquez, J.Graffeuil: Solid State Electron.16, 853 (1973)
A.Roussel, A.Mircea: Solid State Comm.12, 39 (1972)
A.Mircea: Proc. 14th Int'l Conf. Noise in Solid State Dev., Noordwijkerhout, (1975) p. 156
K.Sakai, T.Ikoma: Appl. Phys.5, 165 (1974)
D.V.Lang, R.A.Logan: J. Electron. Mat.4, 1053 (1975)
A.Mircea, A.Mitonneau: Appl. Phys.8, 15 (1975)
In the continuation of the work reported in [10], the level labeled A' in Fig. 1a as well as level F of Fig. 1d of [10] have been repeatedly observed in several samples, therefore their existence is confirmed. On the contrary, level E has not been confirmed since
F.Hasegawa, A.Majerfeld: Electron. Lett.11, 286 (1975)
H.G.Grimmelis, L.A.Ledebo: J. Appl. Phys.46, 2155 (1975)
A.Mitonneau, A.Mircea: LEP internal report J-607 (Sept. 1975)
N.M.Kolchanova, G.N.Talalkin, E.A.Kretova: Soviet Phys. Semicond.4, 174 (1970)
M.Jaros: J. Phys. C (Solid State Phys.)8, 2455 (1975) and private communication
F.Hasegawa, A.Majerfeld: Electron. Letters12, 52 (1976)
Y.Furukawa, Y.Ishibashi: Japan, J. Appl. Phys.6, 503 (1967)
A.Mircea, A.Farrayre, B.Kramer: Proc. IEEE59, 1376 (1971)
L.Hollan, A.Micrea: Proc. 4th Int'l Symp. GaAs (Boulder 1972), (Inst. of Physics Conf. Series No 17, London 1973) pp. 217–223
S.Y.Chiang, G.L.Pearson: J. Appl. Phys.46, 2986 (1975)
J.Rachmann, R.Biermann: Solid State Comm.7, 1771 (1969)
G.H.Glover: IEEE Trans. ED-19, 138 (1972)
L.C.Kimerling: J. Appl. Phys.45, 1839 (1974)
R.Cadoret: J. Cryst. Growth31, 142 (1975)
J.B.Theeten, F.Hottier: Surf. Sci. (to be published)
L.Hollan, J.M.Durand, R. Cadoret: Submitted to publication.
A.Humbert, L.Hollan, D.Bois: Appl. Phys.9, 117 (1976)
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Work supported in part by the Direction Générale de la Recherche Scientifique et Technique (D.G.R.S.T.)