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Outdiffusion of deep electron traps in epitaxial GaAs

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Abstract

The annealing by outdiffusion of the “A-center” in GaAs (a deep electron trap, sometimes attributed to oxygen) has been studied quantitatively, and the diffusion coefficient determined as a function of temperature between 600 and 750 centigrade.

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Work supported in part by the Direction Générale de la Recherche Scientifique et Technique (D.G.R.S.T.)

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Mircea, A., Mitonneau, A., Hollan, L. et al. Outdiffusion of deep electron traps in epitaxial GaAs. Appl. Phys. 11, 153–158 (1976). https://doi.org/10.1007/BF00920595

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  • DOI: https://doi.org/10.1007/BF00920595

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