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Complexing of tellurium-doped gallium arsenide in gas-phase epitaxy

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

The effect of the conditions of gas-phase epitaxy on complexing in tellurium-doped layers of gallium arsenide is studied. Measurements of the intensities of the corresponding photoluminescence lines were used to estimate the concentration of optically-active complexes. A correlation was found between the processes involved in complexing, the growth velocity, and impurity trapping in the layers. The determining role of the surface structure in the formation of complexes, including impurity atoms, is demonstrated.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    I. A. Bobrovnikova, L. G. Lavrent'eva & S. E. Toropov

Authors
  1. I. A. Bobrovnikova
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  2. L. G. Lavrent'eva
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  3. S. E. Toropov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 96–100, February, 1985.

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Bobrovnikova, I.A., Lavrent'eva, L.G. & Toropov, S.E. Complexing of tellurium-doped gallium arsenide in gas-phase epitaxy. Soviet Physics Journal 28, 172–176 (1985). https://doi.org/10.1007/BF00912518

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  • DOI: https://doi.org/10.1007/BF00912518

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