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Anisotropy of impurity trapping by epitaxial layers of gallium arsenide near singular faces with different chlorine and tellurium pressures

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Abstract

Trapping of impurities near the poles <111>A, <110>, and <001> was studied. It was found that the rates of trapping of the impurity near the singular faces behaved differently when the chlorine and tellurium pressures were increased. A singular maximum appears on the (111)A face, a singular minimum remains on the face (110), and the face (001) corresponds to the point on the smooth section of the curve which is unsymmetrical with respect to the pole. The results are interpreted based on the assumption of the formation of an impurity-main-material complex on the surface of the growing crystal.

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Literature cited

  1. S. E. Toropov, L. P. Porokhvnichenko, and L. G. Lavrent'eva, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 6, 46 (1983).

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  2. L. G. Lavrent'eva, S. E. Toropova, and L. P. Porokhovnichenko, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 11, 18 (1982).

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    S. E. Toropov, L. G. Lavrent'eva, L. P. Porokhovnichenko & E. V. Uvarova

Authors
  1. S. E. Toropov
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  2. L. G. Lavrent'eva
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  3. L. P. Porokhovnichenko
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  4. E. V. Uvarova
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii,. Fizika, No. 2, pp. 92–96, February, 1985.

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Toropov, S.E., Lavrent'eva, L.G., Porokhovnichenko, L.P. et al. Anisotropy of impurity trapping by epitaxial layers of gallium arsenide near singular faces with different chlorine and tellurium pressures. Soviet Physics Journal 28, 169–172 (1985). https://doi.org/10.1007/BF00912517

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  • DOI: https://doi.org/10.1007/BF00912517

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