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Soviet Physics Journal

, Volume 28, Issue 2, pp 158–161 | Cite as

Effect of doping the surface of gallium arsenide with gold on the characteristics of Al-(n+-GaAs) contact

  • B. I. Bednyi
  • S. N. Ershov
  • E. N. Kruglova
Physics of Semiconductors and Dielectrics
  • 15 Downloads

Abstract

The effect of prior treatment of the surface of n+-GaAs single crystals in a solution containing gold ions on the volt-ampere characteristic (VAC) of surface-barrier structures is investigated. It is shown that the VAC can be controlled by varying the exposure of the semiconductor to the solution. The experimental results indicate an increase in the tunnel component of the current in the doped structures and are explained within the framework of a model which takes into account the change in the parameters of the dielectric gap (effective thickness and dielectric constant) and of the surface state density at the metal-semiconductor contact with the introduction of gold microimpurity on the interface.

Keywords

Gold Dielectric Constant GaAs Gallium Surface State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1985

Authors and Affiliations

  • B. I. Bednyi
    • 1
  • S. N. Ershov
    • 1
  • E. N. Kruglova
    • 1
  1. 1.Gor'ki Research Institute of Physics and TechnologyN. I. Lobachevskii Gor'ki State UniversityUSSR

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