Skip to main content
Log in

Effect of the concentration gradient of indium on the diffusion of antimony in germanium

  • Brief Communications and Letters to the Editor
  • Published:
Soviet Physics Journal Aims and scope

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Literature cited

  1. H. E. Bridgers, J. H. Scaff, and J. N. Shive (editors), Transistor Technology, Vol. 1, D. Van Nostrand Co., London (1958), p, 294.

    Google Scholar 

  2. V. V. Vas'kin, Fiz. Tekh. Poluprov.,1, 102 (1968).

    Google Scholar 

  3. V. V. Vas'kin, V. A. Uskov, and M. Ya. Shirobokov, Fiz. Tverd. Tela,7, 3356 (1965).

    Google Scholar 

  4. P. V. Pavlov and V. A. Uskov, Fiz. Met. Metalloved.,15, 105 (1963).

    Google Scholar 

  5. V. E. Kosenko, Izv. Akad. Nauk SSSR, Ser. Fiz.,20, 1526 (1956).

    Google Scholar 

  6. P. V. Pavlov and V. A. Uskov, Fiz. Tverd. Tela,8, 2977 (1966).

    Google Scholar 

  7. S. M. Hu, Phys. Rev.,180, 883 (1969).

    Google Scholar 

  8. V. M. Blazov and V. S. Zemskov, Physieochemical Principles of Semiconductor Alloying [in Russian], Nauka, Moscow (1967), p. 53.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 143–146, June, 1972.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Uskov, V.A., Kuril'chik, E.V. Effect of the concentration gradient of indium on the diffusion of antimony in germanium. Soviet Physics Journal 15, 909–911 (1972). https://doi.org/10.1007/BF00912241

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00912241

Keywords

Navigation