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Parameters of diffusion layers after two-stage diffusion including evaporation

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Literature cited

  1. T. Makimoto, Jap. J. Appl. Ph.,4, 487 (1967).

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  2. B. M. Boltaks, Diffusion in Semiconductors [in Russian], Fizmatgiz, Moscow (1961).

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  3. Silicon Integrated Circuit Technology, edited by R. Bougere and R. Donovan [Russian translation], Mir, Moscow (1969).

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Authors and Affiliations

  1. Kaunas Polytechnical Institute, USSR

    I. Vosilyus, A. Grigonis & L. Franevichyus

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  1. I. Vosilyus
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  2. A. Grigonis
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  3. L. Franevichyus
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 122–124, June, 1972.

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Vosilyus, I., Grigonis, A. & Franevichyus, L. Parameters of diffusion layers after two-stage diffusion including evaporation. Soviet Physics Journal 15, 881–883 (1972). https://doi.org/10.1007/BF00912231

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  • DOI: https://doi.org/10.1007/BF00912231

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