Abstract
Some n-CdS-p-Cu2S film heterojunctions have been obtained which differ from previously studied hetero junctions in the anomalous sign of the rectification and the presence of photo sensitivity only in the fundamental-absorption region of Cu2S. These features of the characteristic are associated with the effect of the surface states at the boundary on the energy structure of the hetero junction. The results are interpreted on the assumption that the main mechanism involved in the passage of current across the hetero junction is the tunneling of the electrons through the barrier at the boundary into the Cu2S.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 74–76, June, 1972.
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Anshon, A.V., Karpovich, I.A. Some properties of n-CdS-p-Cu2S film heterojunctions. Soviet Physics Journal 15, 840–842 (1972). https://doi.org/10.1007/BF00912221
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DOI: https://doi.org/10.1007/BF00912221