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Use of the method of broken total internal reflection to determine semiconductor properties

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Abstract

We discuss the possibility of determining the electrophysical properties of semiconducting materials based on the determination of their optical constants by the method of broken total internal reflection. As the material for the total-internal-reflection prism it is proposed to use the experimental material, but with a much lower carrier concentration, The possibilities of the proposed method are demonstrated using as an example high-resistance silicon for the TIR prism and the experimental sample of n-type silicon.

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Authors and Affiliations

  1. N. G. Chernyshevskii Saratov State University, USSR

    D. I. Bilenko, B. A. Dvorkin & Z. V. Shekhter

Authors
  1. D. I. Bilenko
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  2. B. A. Dvorkin
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  3. Z. V. Shekhter
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 19–23, June, 1972.

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Bilenko, D.I., Dvorkin, B.A. & Shekhter, Z.V. Use of the method of broken total internal reflection to determine semiconductor properties. Soviet Physics Journal 15, 793–797 (1972). https://doi.org/10.1007/BF00912210

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  • DOI: https://doi.org/10.1007/BF00912210

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