Abstract
A study is made of the photoluminescence of epitaxial films of ZnSe on GaAs grown by the gas-transport technique in a flow of hydrogen at various epitaxy temperatures and times. Excitation is by ultraviolet light with λex=365 nm. The photoluminescence spectra of films grown on GaAs and quartz are compared. It is shown that the position of the photoluminescence bands depends on the temperature and duration of growth and also on the degree of crystalline perfection of the ZnSe films. The temperature quenching of the 710-nm (1.7 eV) and 560-nm (2.2 eV) bands indicates that each has two activation energies, suggesting that these bands are donor-acceptor in nature.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 42–45, July, 1982.
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Vilisov, G.T., Nuvar'eva, V.V. & Ramazanov, P.E. Photoluminescence of epitaxial films of ZnSe on GaAs. Soviet Physics Journal 25, 618–620 (1982). https://doi.org/10.1007/BF00911789
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DOI: https://doi.org/10.1007/BF00911789