Abstract
The nature of ac generation in an aluminum-amorphous terbium thiogermanate-monocrystalline germanium structure is discussed. An expression obtained for the frequency (f) of the generated current satisfactorily describes the experimentally observed dependences of f on the load resistance RL, temperature, thickness of the Tb2GeS5 film, and the area of contact with it (S). The specific rate of carrier generation in the germanium space-charge region is calculated from plots of f−1 against RL and S.
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Literature cited
V. F. Agafonnikov, V. I. Gaman, S. F. Glushchuk, and L. I. Terekhina, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 1, 3 (1981).
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Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 28–31, July, 1982.
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Agafonnikov, V.F., Gaman, V.I., Glushchuk, S.F. et al. Generating properties of Al-Tb2GeS5-Ge MIS structures. Soviet Physics Journal 25, 603–606 (1982). https://doi.org/10.1007/BF00911785
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DOI: https://doi.org/10.1007/BF00911785