Advertisement

Some products formed by etching silicon

  • V. A. Arslambekov
  • M. V. Ivanov
Brief Communications
  • 19 Downloads

Conclusions

  1. 1.

    A complex film of reaction products is formed on the surface of silicon during acid etching; these products include, in addition to SiO2, SiO, and SiOF2.

     
  2. 2.

    The treatment of alkali-etched silicon with fluorine leads to the formation of films of SiOF2 by the reaction of residual oxide films with the fluorine.

     

Keywords

Oxide Silicon SiO2 Fluorine Oxide Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Literature cited

  1. 1.
    N. I. Leont'ev and Yu. K. Udovichenko, Pribory i Tekh. Éksperim., No. 1, 101 (1959).Google Scholar
  2. 2.
    A. P. Averina, Pribory i Tekh. Éksperim., No. 3, 123 (1962).Google Scholar
  3. 3.
    R. W. Lawson, J. Sci. Instr.,39, No. 6, 281 (1962).Google Scholar
  4. 4.
    Yu. N. Tikhonov, Technology of the Preparation of Germanium and Silicon Diodes and Triodes [in Russian], “Energiya,” Moscow-Leningrad (1964).Google Scholar
  5. 5.
    Collection: Mechanisms of Reactions between Metals and Gases [in Russian], “Nauka,” (1964).Google Scholar

Copyright information

© Consultants Bureau 1969

Authors and Affiliations

  • V. A. Arslambekov
    • 1
  • M. V. Ivanov
    • 1
  1. 1.Institute of Physical ChemistryAcademy of Sciences of the USSRUSSR

Personalised recommendations