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The effects of carrier degeneracy on transport properties of the double heterostructure injection laser

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Abstract

It is shown that carrier degeneracy plays an important role in determining the electrical properties of double heterostructure injection lasers. Correct statistical treatment of the charge cariers in the device leads to a generalised Einstein relation between the carrier transport coefficients. Such a relation (for both electrons and holes) is used in numerical solutions of semiconductor transport equations applicable to the laser. Experimentally observed I–V characteristics of the laser are explained in terms of carrier degeneracy effects.

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Authors and Affiliations

  1. Department of Applied Mathematics and Astronomy, University College, P.O. Box 78, CF1 1XL, Cardiff, Wales

    K. A. Shore

  2. Department of Electronics, University of Southampton, SO9 5NH, Southampton, England

    M. J. Adams

Authors
  1. K. A. Shore
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  2. M. J. Adams
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Shore, K.A., Adams, M.J. The effects of carrier degeneracy on transport properties of the double heterostructure injection laser. Appl. Phys. 9, 161–164 (1976). https://doi.org/10.1007/BF00903953

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  • DOI: https://doi.org/10.1007/BF00903953

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