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Behavior of copper in gallium arsenide with a high tellurium concentration

I. Electrophysical properties and cathode luminescence spectra

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Abstract

The electrophysical properties and cathode luminescence spectra of gallium arsenide with a high tellurium concentration (n = 2·1018 cm−3) alloyed with copper are investigated under different diffusion conditions. Centers are determined from measurements of the Hall effect with an ionization energy of 0.190 ± 0.006 eV whose concentration does not depend on the arsenic vapor pressure (0.1 and 1 atm) and the cooling rate of the samples from the diffusion temperature. A band with hνm = 1.30–1.32 eV whose intensity depends on the cooling conditions of the samples was observed in the cathode luminescence spectra of these samples. The nature of the observed defects is discussed.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    I. V. Kamenskaya, M. A. Krivov, E. V. Malisova, V. C. Morozov, M. P. Nikiforova, E. A. Popova & S. S. Khludkov

Authors
  1. I. V. Kamenskaya
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  2. M. A. Krivov
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  3. E. V. Malisova
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  4. V. C. Morozov
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  5. M. P. Nikiforova
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  6. E. A. Popova
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  7. S. S. Khludkov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 93–99, July, 1979.

In conclusion of this article the authors express their gratitude to L. K. Tarasova for preparation of the samples.

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Kamenskaya, I.V., Krivov, M.A., Malisova, E.V. et al. Behavior of copper in gallium arsenide with a high tellurium concentration. Soviet Physics Journal 22, 771–776 (1979). https://doi.org/10.1007/BF00902897

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  • DOI: https://doi.org/10.1007/BF00902897

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