Soviet Physics Journal

, Volume 27, Issue 11, pp 932–934 | Cite as

Field drift of local centers as the cause of instability in the dark conductivity in CdS films grown in an atmosphere containing oxygen

  • S. A. Korepanov
  • P. A. Viktor
  • V. V. Serdyuk
Physics of Semiconductors and Dielectrics


A study has been made of the isothermal increase in the dark conductivity of cadmium sulfide films grown in air by electrohydrodynamic sputtering on heated dielectric substrates using solutions of cadmium chloride and thiourea. The conductivity increase occurs over a wide temperature range when a steady voltage is connected to the specimen. It is found that the rise is due to field drift of shallow donor centers, which are provided by interstitial sodium atoms. The drift redistributes the donors in the crystallites, which reduces the heights of the drift barriers between crystallites and reduces the adsorption capacities of the crystallite surfaces. The temperature dependence of the isothermal dark-conductivity increase has given the mobility activation energy for the drifting centers, which is Ed = 0.93 ± 0.07 eV.


Thiourea Cadmium Chloride Cadmium Sulfide Shallow Donor Dielectric Substrate 
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Copyright information

© Plenum Publishing Corporation 1985

Authors and Affiliations

  • S. A. Korepanov
    • 1
  • P. A. Viktor
    • 1
  • V. V. Serdyuk
    • 1
  1. 1.Mechnikov Odessa UniversityUSSR

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