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Evaluation of concentration-depth profiles by sputtering in SIMS and AES

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Abstract

Experimental requirements for a successful application of sputtering techniques for depth profiling are summarized. Evidence is given for the depth resolution expected from the sputtering process. Principles for the evaluation of the concentration-depth relation in SIMS and AES are discussed. Examples of both techniques demonstrate present possibilities for depth analysis.

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Authors and Affiliations

  1. Institut für Werkstoffwissenschaften, Max-Planck-Institut für Metallforschung, Seestraße 92, D-7000, Stuttgart 1, Fed. Rep. Germany

    S. Hofmann

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  1. S. Hofmann
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Hofmann, S. Evaluation of concentration-depth profiles by sputtering in SIMS and AES. Appl. Phys. 9, 59–66 (1976). https://doi.org/10.1007/BF00901910

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  • DOI: https://doi.org/10.1007/BF00901910

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