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Soviet Physics Journal

, Volume 17, Issue 8, pp 1099–1101 | Cite as

Deposition of SbSI and BiSeI films in quasi-equilibrium conditions

  • O. V. Luksha
  • Yu. Yu. Firtsak
  • A. P. Zhdankin
  • V. Yu. Slivka
  • N. I. Dovgoshei
  • D. V. Chepur
Article

Abstract

The problem of obtaining structurally perfect SbSI and BiSeI films in quasi-equilibrium conditions is examined. A stoichiometric composition of the gas phase leads to the formation of acicular single crystals of SbSI and BiSeI, while an excess of Sb during the deposition of SbSI leads to films with lamellar crystallites and the C axis perpendicular to the substrate. Some of the electrical and optical properties of the SbSI films are compared with the properties of similar films obtained by discrete evaporation.

Keywords

Evaporation Optical Property Stoichiometric Composition BiSeI SbSI 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1976

Authors and Affiliations

  • O. V. Luksha
    • 1
  • Yu. Yu. Firtsak
    • 1
  • A. P. Zhdankin
    • 1
  • V. Yu. Slivka
  • N. I. Dovgoshei
    • 1
  • D. V. Chepur
    • 1
  1. 1.Uzhgorod State UniversityUSSR

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