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A study of the photoluminescence of crystals of the hexagonal modification of Β-Ga2As3

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Abstract

The excitation and radiation spectra ofΒ-Ga2As3 crystals have been studied. The radiation spectrum consists of two overlapping bands (1.44 and 1.61 eV) and a very weak band in the 2.8–2.9 eV region. The temperature dependence of the halfwidth of the luminescence bands was studied and the position of the levels responsible for the luminescence were determined: E1,v = 0.84 eV and E2,v = 0.59 eV. These luminescence bands in Β-Ga2As3 crystals undergo thermal quenching. The kinetics of the photoconductivity and the photoluminescence were studied and it was shown that the recombination of nonequilibrium carriers occurs by two channels: via fast s levels and slow r levels, the trapping cross section of the latter being\(S_{r_2 } = 3 \cdot 10^{ - 13} cm^2\).

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Authors and Affiliations

  1. V. I. Lenin Kishinev University, USSR

    V. P. Ambros, M. I. Karaman, V. P. Mushinskii & L. I. Palaki

Authors
  1. V. P. Ambros
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  2. M. I. Karaman
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  3. V. P. Mushinskii
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  4. L. I. Palaki
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 72–75, September, 1972.

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Ambros, V.P., Karaman, M.I., Mushinskii, V.P. et al. A study of the photoluminescence of crystals of the hexagonal modification of Β-Ga2As3 . Soviet Physics Journal 15, 1298–1301 (1972). https://doi.org/10.1007/BF00901522

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  • DOI: https://doi.org/10.1007/BF00901522

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