Applied physics

, Volume 25, Issue 2, pp 139–142 | Cite as

Calculation of the temperature during electron pulse annealing of silicon

  • M. Toulemonde
  • P. Siffert
Solids and Surfaces


High power density electron beams offer new opportunities for studies of epitaxial growth of semiconductor materials. Assuming that the mechanism of epitaxial growth can be understood as a surface melting followed by supercooling regrowth, the heat flow equation has been applied to calculate the temperature reached after an electron beam pulse of power density between 0.5–2 J/cm2. Comparison with laser annealing is made.


61.80 78.30 85.30 


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Copyright information

© Springer-Verlag 1981

Authors and Affiliations

  • M. Toulemonde
    • 1
  • P. Siffert
    • 1
  1. 1.Groupe de Physique et Applications des Semiconducteurs (PHASE)Centre de Recherches NucléairesStrasbourg CedexFrance

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