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Applied physics

, Volume 25, Issue 2, pp 139–142 | Cite as

Calculation of the temperature during electron pulse annealing of silicon

  • M. Toulemonde
  • P. Siffert
Solids and Surfaces

Abstract

High power density electron beams offer new opportunities for studies of epitaxial growth of semiconductor materials. Assuming that the mechanism of epitaxial growth can be understood as a surface melting followed by supercooling regrowth, the heat flow equation has been applied to calculate the temperature reached after an electron beam pulse of power density between 0.5–2 J/cm2. Comparison with laser annealing is made.

PACS

61.80 78.30 85.30 

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References

  1. 1.
    A.C. Greenwald, A.R. Kirkpatrick, R.G. Little, J.A. Minnuci: J. Appl. Phys.50, 783 (1979)CrossRefADSGoogle Scholar
  2. 2.
    A.R. Kirkpatrick: InLaser and Electron Beam Processing of Electronic Materials (Electrochemical Society, Princeton, NJ 1980), p. 108Google Scholar
  3. 3.
    P. Baeri, S.U. Campisano, G. Foti, E. Rimini: Appl. Phys. Lett.33, 137 (1978) and J. Appl. Phys.50, 788 (1979)CrossRefADSGoogle Scholar
  4. 4.
    J.C. Wang, R.F. Wood, P.P. Pronko: Appl. Phys. Lett.33, 455 (1978)CrossRefADSGoogle Scholar
  5. 5.
    R.O. Bell, M. Toulemonde, P. Siffert: Appl. Phys.19, 313 (1979)CrossRefADSGoogle Scholar
  6. 6.
    A.E. Bell: RCA Rev.40 295 (1979)ADSGoogle Scholar
  7. 7.
    M.S. Carslaw, J.C. Jaeger:Conduction of Heat in Solids, 2nd ed. (Clarendon Press, Oxford 1959) p. 10Google Scholar
  8. 8.
    A.E. Grün: Z. Naturforsch. A12, 89 (1956)Google Scholar
  9. 9.
    T.E. Everhart, P.H. Hoff: J. Appl. Phys.42, 5837 (1971)CrossRefADSGoogle Scholar
  10. 10.
    A. Cohn, G. Caledonia: J. Appl. Phys.41, 3767 (1970)CrossRefADSGoogle Scholar
  11. 11.
    G. Fontaine: InMicroanalyse et microscopie électronique à balayage (Les éditions de physique, Paris 1979) p. 39Google Scholar
  12. 12.
    J.S. Greeneich:Electron Beam Processes in Electron Beam Technology in Microelectronic Fabrication, (Academic Press, New York 1980)Google Scholar
  13. 13.
    K. Murata, T. Matsukawa, R. Schimizu: Jpn. J. Appl. Phys.10, 678 (1971)CrossRefGoogle Scholar
  14. 14.
    J.M. Berger: InMethods in Computational Physics, Vol. 1, ed. by B. Alder (Academic Press, New York 1963)Google Scholar
  15. 15.
    F. Hegedus: Thèse d'Université de Strasbourg (1971)Google Scholar
  16. 16.
    M. von Allmen: InLaser and Electron Beam Processing of Materials, ed. by C.W. White and P.S. Peercy (Academic Press, New York 1980)Google Scholar
  17. 17.
    D.H. Auston, C.M. Surko, T.N.C. Venkatesan, R.E. Slusher, J.A. Golovchenko: Appl. Phys. Lett.33, 437 (1978)CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag 1981

Authors and Affiliations

  • M. Toulemonde
    • 1
  • P. Siffert
    • 1
  1. 1.Groupe de Physique et Applications des Semiconducteurs (PHASE)Centre de Recherches NucléairesStrasbourg CedexFrance

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