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Oscillatory effective mass in degenerate narrow-gap semiconductors in a quantizing magnetic field

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Abstract

An attempt is made to study the effect of a quantizing magnetic field on the effective electron mass in degeneraten-type narrow-gap semiconductors at low temperatures. It is found, takingn-Hg1−x Cd x Te as an example, that the effective electron mass shows an oscillatory magnetic-field dependence as is expected because of the dependence of the effective mass in degenerate non-parabolic bands on Fermi energy which oscillates with changing magnetic field. The amplitude of oscillations is, however, found to be significantly influenced by the alloy composition whereas the period is found to be independent of the band non-parabolicity, i.e. of the compositional parameter in ternary semiconductors.

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Author notes

  1. A. K. Chowdhury

    Present address: Department of Physics, University of Patna, Patna, India

Authors and Affiliations

  1. Institute of Radio Physics and Electronics, University College of Science and Technology, 92, Acharya P. C. Road, 700009, Calcutta, India

    A. N. Chakravarti, A. K. Chowdhury, K. P. Ghatak, S. Ghosh & A. Dhar

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  1. A. N. Chakravarti
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  2. A. K. Chowdhury
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  3. K. P. Ghatak
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  4. S. Ghosh
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  5. A. Dhar
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Chakravarti, A.N., Chowdhury, A.K., Ghatak, K.P. et al. Oscillatory effective mass in degenerate narrow-gap semiconductors in a quantizing magnetic field. Appl. Phys. 25, 105–108 (1981). https://doi.org/10.1007/BF00901280

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  • DOI: https://doi.org/10.1007/BF00901280

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