Applied physics

, Volume 22, Issue 4, pp 393–397 | Cite as

Oxidation inhibiting properties of Si3N4-layers produced by ion implantation

  • M. Ramin
  • H. Ryssel
  • H. Kranz
Contributed Papers

Abstract

The implantation of nitrogen into silicon to produce Si3N4 layers was investigated to find an alternative to CVD-Si3N4 layers used in ISOPLANAR-and LOCOS-technology. The technological properties of the implanted Si3N4 layers in respect to oxidation inhibition and etching are comparable or superior to CVD-Si3N4 layers. The implanted layers are more resistent against oxidation for nitrogen doses of 2.4×1017 cm−2 at 30keV. The etching behavior is comparable for both types of Si3N4-layers. In the implanted layers no pinholes are found and threre is no formation of a bird's beak, as is well known in the case of CVD-nitride.

PACS

85.30 61.80 

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Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • M. Ramin
    • 1
  • H. Ryssel
    • 1
  • H. Kranz
    • 1
  1. 1.Fraunhofer-Institut für FestkörpertechnologieMünchen 60Fed. Rep. Germany

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