Oxidation inhibiting properties of Si3N4-layers produced by ion implantation
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The implantation of nitrogen into silicon to produce Si3N4 layers was investigated to find an alternative to CVD-Si3N4 layers used in ISOPLANAR-and LOCOS-technology. The technological properties of the implanted Si3N4 layers in respect to oxidation inhibition and etching are comparable or superior to CVD-Si3N4 layers. The implanted layers are more resistent against oxidation for nitrogen doses of 2.4×1017 cm−2 at 30keV. The etching behavior is comparable for both types of Si3N4-layers. In the implanted layers no pinholes are found and threre is no formation of a bird's beak, as is well known in the case of CVD-nitride.
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- 2.J.A.Apples, E.Kooi, M.M.Paffen, J.J.H.Schatorje, W.H.C.G.Vertenylen: Philips Res. Rep.25, 118 (1970)Google Scholar
- 3.J.A.Appels, M.M.Paffen: Philips Res.Rep.26, 157 (1971)Google Scholar
- 6.J.H.Freeman, G.A.Gard, D.J.Mazey, J.H.Stephen,F.B.Whiting: Proc. Europ. Conf. on Ion Implantation, Reading (1970) p.74Google Scholar
- 7.C.R.Fritsche, W.Rothemund: J. Electrochem. Soc.120, 1603 (1973)Google Scholar
- 9.W.J.M.J.Josquin: Proc. Ion Beam Modification of Materials Vol. 3, Budapest, (1978) p. 1433Google Scholar
- 10.T.Tokuyama:Ion Implantation in Semiconductors, ed. by F.Chernow, J.A.Borders, D.K.Brice (Plenum Press New York 1977), p. 519Google Scholar
- 13.W.S.Johnson, J.F.Gibbons, S.W.Mylroie:Projected Range Statistics (Dowden, Hutchinson, and Ross, Stroudsburg 1975)Google Scholar