Applied physics

, Volume 22, Issue 4, pp 393–397 | Cite as

Oxidation inhibiting properties of Si3N4-layers produced by ion implantation

  • M. Ramin
  • H. Ryssel
  • H. Kranz
Contributed Papers


The implantation of nitrogen into silicon to produce Si3N4 layers was investigated to find an alternative to CVD-Si3N4 layers used in ISOPLANAR-and LOCOS-technology. The technological properties of the implanted Si3N4 layers in respect to oxidation inhibition and etching are comparable or superior to CVD-Si3N4 layers. The implanted layers are more resistent against oxidation for nitrogen doses of 2.4×1017 cm−2 at 30keV. The etching behavior is comparable for both types of Si3N4-layers. In the implanted layers no pinholes are found and threre is no formation of a bird's beak, as is well known in the case of CVD-nitride.


85.30 61.80 


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  1. 1.
    B.E.Deal, A.S.Grove: J. Appl. Phys.36, 3770 (1965)CrossRefGoogle Scholar
  2. 2.
    J.A.Apples, E.Kooi, M.M.Paffen, J.J.H.Schatorje, W.H.C.G.Vertenylen: Philips Res. Rep.25, 118 (1970)Google Scholar
  3. 3.
    J.A.Appels, M.M.Paffen: Philips Res.Rep.26, 157 (1971)Google Scholar
  4. 4.
    M.Watanabe A.Tooi: Jpn. J. Appl. Phys.5, 737 (1966)CrossRefGoogle Scholar
  5. 5.
    P.V.Pavlov, E.V.Shitova: Sov. Phys. Dokl.12, 11 (1967)ADSGoogle Scholar
  6. 6.
    J.H.Freeman, G.A.Gard, D.J.Mazey, J.H.Stephen,F.B.Whiting: Proc. Europ. Conf. on Ion Implantation, Reading (1970) p.74Google Scholar
  7. 7.
    C.R.Fritsche, W.Rothemund: J. Electrochem. Soc.120, 1603 (1973)Google Scholar
  8. 8.
    Y.Wada, M.Ashikawa Jpn. J. Appl. Phys.15, 1725 (1976)CrossRefGoogle Scholar
  9. 9.
    W.J.M.J.Josquin: Proc. Ion Beam Modification of Materials Vol. 3, Budapest, (1978) p. 1433Google Scholar
  10. 10.
    T.Tokuyama:Ion Implantation in Semiconductors, ed. by F.Chernow, J.A.Borders, D.K.Brice (Plenum Press New York 1977), p. 519Google Scholar
  11. 11.
    T.Enomoto, R.Ando, H.Morita, H.Nakayama: Jpn. J. Appl. Phys.17, 1049 (1978)CrossRefGoogle Scholar
  12. 12.
    J.F.Fränz, W.L.Langheinrich Solid State Electron.14, 499 (1971)CrossRefGoogle Scholar
  13. 13.
    W.S.Johnson, J.F.Gibbons, S.W.Mylroie:Projected Range Statistics (Dowden, Hutchinson, and Ross, Stroudsburg 1975)Google Scholar

Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • M. Ramin
    • 1
  • H. Ryssel
    • 1
  • H. Kranz
    • 1
  1. 1.Fraunhofer-Institut für FestkörpertechnologieMünchen 60Fed. Rep. Germany

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