Abstract
The activation energy for the annealing of arsenic implanted layers in silicon was studied by isothermal and isochronal annealing experiments. Different mechanisms are responsible for the annealing behavior. At low doses and at temperatures below 700°C a doubly charged complex is formed with an activation energy of 0.86 eV which dissociates at higher temperatures with an activation energy of 3.58 eV. At high doses which result in the formation of an amorphous layer a single activation energy of 2.75 eV is measured.
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Ryssel, H., Kranz, H. The electrical activation of implanted arsenic in silicon. Appl. Phys. 7, 11–14 (1975). https://doi.org/10.1007/BF00900513
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DOI: https://doi.org/10.1007/BF00900513