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Temperature dependence of the stationary photocurrent in doped sillenite type crystals

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

The temperature dependence of the photocurrent in doped sillenite-type crystals is investigated in the temperature range 80–300°K. In the region of low temperatures thermally activated photocurrent is observed, while at high temperatures quenching is observed. In a number of specimens the temperature quenching section is absent. The results are explained within the framework of a multilevel recombination model involving slow and fast recombination centers as well as capture levels.

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Authors and Affiliations

  1. Tomsk Institute of Automated Control Systems and Radioelectronics, USSR

    I. S. Zakharov, P. A. Petukhov, V. M. Skorikov, M. G. Kisteneva & Yu. F. Kargin

Authors
  1. I. S. Zakharov
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  2. P. A. Petukhov
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  3. V. M. Skorikov
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  4. M. G. Kisteneva
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  5. Yu. F. Kargin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 85–89, June, 1985.

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Zakharov, I.S., Petukhov, P.A., Skorikov, V.M. et al. Temperature dependence of the stationary photocurrent in doped sillenite type crystals. Soviet Physics Journal 28, 514–516 (1985). https://doi.org/10.1007/BF00900383

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  • DOI: https://doi.org/10.1007/BF00900383

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