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Relaxation processes on A ZnO surface irradiated by electrons

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

The dependence of effective charge carrier lifetime and the surface conductivity relaxation constant of polycrystalline zinc oxide as functions of electron irradiation dosage at constant residual gas pressure, partial oxygen pressure at constant irradiation dosage, and partial water vapor pressure at constant irradiation dosage are studied. Surface state types and the charge carrier relaxation mechanism are determined.

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Authors and Affiliations

  1. S. M. Kirev Nuclear Physics Scientific-Research Institute, Tomsk State University, USSR

    M. M. Mikhailov

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  1. M. M. Mikhailov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 81–85, June, 1985.

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Mikhailov, M.M. Relaxation processes on A ZnO surface irradiated by electrons. Soviet Physics Journal 28, 510–513 (1985). https://doi.org/10.1007/BF00900382

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  • DOI: https://doi.org/10.1007/BF00900382

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