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Field dependence of charge carrier mobility in InSb crystals heavily irradiated by neutrons

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

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Literature cited

  1. V. L. Bonch-Bruevich and S. G. Kalashnikov, Semiconductor Physics [in Russian], Nauka, Moscow (1977).

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  3. P. G. Zhumatii, Phys. Status Solidi (b),75, No. 1, 61 (1976).

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  4. V. L. Bonch-Bruevich, I. P. Zvyagin, R. Knaiper, A. G. Mironov, R. Énderlain, and B. Ésser, Electronic Theory of Disordered Semiconductors [in Russian], Nauka, Moscow (1981), Chap. II, Sec. 7.

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Authors
  1. N. V. Baramidze
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  2. N. V. Duduchava
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  3. N. I. Kurdiani
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 17–19, February, 1984.

The authors thank V. L, Bonch-Bruevich for his evaluation of the results.

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Baramidze, N.V., Duduchava, N.V. & Kurdiani, N.I. Field dependence of charge carrier mobility in InSb crystals heavily irradiated by neutrons. Soviet Physics Journal 27, 95–97 (1984). https://doi.org/10.1007/BF00900124

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  • DOI: https://doi.org/10.1007/BF00900124

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