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The potential factorization method in the theory of electron scattering in Ge-Si alloys

  • Semiconductor and Dielectric Physics
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Soviet Physics Journal Aims and scope

Abstract

Electron scattering in the random field produced by difference in the atomic pseudopotentials of the solvent (germanium) and dissolved material (silicon) in unordered Ge-Si substitutional alloys with low Si content is studied. The temperature dependence of electron mobility is determined.

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Author information

Authors and Affiliations

  1. Ukrainian Agricultural Academy, Ukraine

    V. D. Iskra

Authors
  1. V. D. Iskra
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 47–52, May, 1987.

In conclusion the author sincerely thanks V. L. Bonch-Bruevich for his interest in the study and valuablediscussions.

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Iskra, V.D. The potential factorization method in the theory of electron scattering in Ge-Si alloys. Soviet Physics Journal 30, 400–404 (1987). https://doi.org/10.1007/BF00900090

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  • DOI: https://doi.org/10.1007/BF00900090

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