Advertisement

Applied physics

, Volume 23, Issue 1, pp 15–19 | Cite as

Solubility limit of impurities in silicon after laser induced melting

  • R. Stuck
  • E. Fogarassy
  • J. J. Grob
  • P. Siffert
Solids and Surfaces

Abstract

The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectroscopy measurements in channelling and random conditions. In all cases, a maximum solubilityC S * , much higher than the equilibrium solubility limitC S 0 and independent of the pulsed laser energy density, was found. The values obtained are in good agreement with those calculated from a simple model based on phase diagram considerations, using the relationship:
$$C_S^* = \frac{{C_S^0 }}{{k_0 }}k^* ,$$

wherek 0 andk * are the equilibrium and effective distribution coefficients. Finally, the existence of a new solubility limit for a laser treatment is discussed.

PACS

64.75+g 61.70T 42.55 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    C.W. White, J. Narayan, R.T. Young: InLaser Solid Interactions and Laser Processing, Boston (1978), ed. by S.D. Ferris, H.J. Leamy, and J.M. Poate, (AIP Conf. Proc. 50), p. 275Google Scholar
  2. 2.
    P. Revesz, G.Y. Farkas, J. Guylai: InLaser Effects on Ion Implanted Semiconductors (1978), ed. by E. Rimini, (Proc. of the Catania Conf.), p. 184Google Scholar
  3. 3.
    J.C. Bean, H.J. Leamy, J.M. Poate, G.K. Celler: InLaser Solid Interactions and Laser Processing, Boston (1978), ed. by S.D. Ferris, H.J. Leamy, and J.M. Poate (AIP Conf. Proc. 50), p. 487Google Scholar
  4. 4.
    A.G. Cullis, J.M. Poate, G.K. Celler: InLaser Solid Interactions and Laser Processing, Boston (1978), ed. by S.D. Ferris, H.J. Leamy, and J.M. Poate (AIP Conf. Proc. 50), p. 311Google Scholar
  5. 5.
    C.W. White, S.R. Wilson, B.R. Appleton, F.W. Young, Jr.: J. Appl. Phys. (in press)Google Scholar
  6. 6.
    J. Narayan, R.T. Young, R.F. Wood, W.H. Christie: Appl. Phys. Lett.33, 338 (1978)CrossRefADSGoogle Scholar
  7. 7.
    R. Stuck, E. Fogarassy, A. Grob, J.J. Grob, J.C. Muller, P. Siffert: InLaser and Electron Beam Processing of Electronic Materials, ed. by C.L. Anderson, G.K. Celler, G.A. Rozgonyi (Los Angeles 1979), p. 193Google Scholar
  8. 8a.
    W.K. Chu, J.M. Mayer, M.A. Nicolet:Backscattering Spectrometry, (Academic Press, New York 1978)Google Scholar
  9. 8b.
    A. Benninghoven, C.A. Evans, Jr., R.A. Powell, R. Shimizu, H.A. Storms (eds.):Secondary Ion Mass Spectrometry (SIMS) II, Springer Series in chem. Phys.9, (Springer, Berlin, Heidelberg, New York 1979)Google Scholar
  10. 9.
    F.A. Trumbore: Bell. Syst. Technol. J.39, 205 (1960)Google Scholar
  11. 10.
    J.C. Wang, R.F. Wood, P.P. Pronko: Appl. Phys. Lett.33, 455 (1978)CrossRefADSGoogle Scholar
  12. 11.
    P. Baeri, S.U. Campisano, G. Foti, E. Rimini: J. Appl. Phys.50, 788 (1979)CrossRefADSGoogle Scholar
  13. 12.
    K.A. Jackson, H.J. Leamy: InLaser Solid Interactions and Laser Processing, Boston (1978), ed. by S.D. Ferris, H.J. Leamy, and J.M. Poate (AIP Conf. Proc. 50), p. 103Google Scholar
  14. 13.
    M. Hillert, B. Sundman: Acta Met.25, 11 (1977)CrossRefGoogle Scholar
  15. 14.
    L. Jastrebski, A.E. Bell, C.P. Wu: Appl. Phys. Lett.35, 608 (1979)CrossRefADSGoogle Scholar
  16. 15.
    A.G. Cullis, H.C. Webber, J.M. Poate, A.L. Simons: J. Appl. Phys. Lett.34, 320 (1980)CrossRefADSGoogle Scholar
  17. 16.
    D. Hoonhout, T. de Jong, F.W. Saris: Presented at the Workshop on Laser Annealing 1979 Mons (Belgium)Google Scholar
  18. 17.
    S. Fischler: J. Appl. Phys.33, 1615 (1962)CrossRefGoogle Scholar
  19. 18.
    H. Statz: J. Phys. Chem. Solids24, 699 (1963)Google Scholar
  20. 19.
    P. Baeri, S.U. Campisano, M.G. Grimaldi, E. Rimini: Presented at the Material Research Society Symposium. Laser and Electron Beam processing of Materials, Cambridge, MA (Nov. 1979)Google Scholar
  21. 20.
    B.K. Jindal, W.A. Tiller: J. Chem. Phys.49, 4632 (1968)CrossRefGoogle Scholar
  22. 21.
    E. Fogarassy, R. Stuck, J.J. Grob, A. Grob, P. Siffert: Presented at the material Research Society Symposium. Laser and Electron Beam processing of Materials, Cambridge, MA (Nov. 1979)Google Scholar
  23. 22.
    P.L. Liu, R. Yen, N. Bloembergen, R.T. Hodgoon: Appl. Phys. Lett.34, 864 (1979)CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • R. Stuck
    • 1
  • E. Fogarassy
    • 1
  • J. J. Grob
    • 1
  • P. Siffert
    • 1
  1. 1.Groupe de Physique et Applications des Semiconducteurs (PHASE)Centre de Recherches NucleairesStrasbourg-CedexFrance

Personalised recommendations